Equipment Name: Plasma Therm Versaline ICP etcher
Location: 364 ERC
Max Wafer Size: 6”
General Description: The Plasma Therm Versaline ICP Etcher is a highly selective anisotropic etch system capable of etching a wide variety of materials.
- A top coil is supplied with 2 MHz RF at 2000 Watts maximum and the bottom electrode is supplied with 13.56 MHz RF at 600 Watts maximum.
- Mechanical clamping of 6” silicon wafer with backside Helium cooling.
- Eight process gases are Cl2, BCl3, SF6, CF4, CHF3, Ar, O2, and H2.
- Endpoint detection uses a CCD Camera mounted on the PM chamber lid. This configuration uses a laser emission aimed through a viewport to measure intensity and reflectivity changes in the process chamber to determine endpoint.
A wide variety of different sized substrates can be mounted to a 6” silicon wafer using Dow Corning 340 silicon thermal compound.
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