Equipment Name: Technics 85 RIE
Location: 364 ERC
Max Wafer Size: 6”
General Description: The Technics RIE is designed for advanced
etching applications such as dielectric material removal, etching of oxides, nitrides, polyimides, silicon, epoxy removal, and photoresist stripping and descum.
- An integrated supply provides 30 KHz RF at 300 Watts maximum power to the electrode.
- Substrate temperature is controller with a Neslab Chiller ranging from -30 to 100 °C.
- Six process gases are SF6, CF4, CHF3, Ar, O2, and N2.
- The plasma chamber is configured with a 6” powered electrode to accommodate a wide range of wafer sizes, piece parts, IC packages and other components.
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