AG Associates Heatpulse 410 RTA

AG Associates Heatpulse 410 RTA

AG Associates Heatpulse 410 RTA

General Information

Equipment Name: AG Associates Heatpulse 410 Rapid Thermal Processor

Location: 364 ERC

Max Wafer Size: 4”


System Information

General Description: The Heatpulse 410 uses high intensity visible radiation to heat single substrates for short periods at precisely controlled temperatures. Some of the applications of the Heatpulse 410 are ion implantation activation, polysilicon annealing, contact alloying, GaAs processing, and Silicide formation.


  • Recommended steady state temperature: 400 - 1150°C.  Minimum temperature is 300°C and maximum temperature is 1350°C
  • Steady state temperature stability: +/- 7°C
  • Temperature monitoring: Thermocouple
  • Heating rate: 10 - 300°C recommended 220°C
  • Cooling Rate: Temperature dependent. Maximum 80°C/second
  • Steady state time: 1 – 9999 seconds ( 1- 300 seconds recommended)
  • Radiant flux: ±0.25%
  • Substrate sizes: pieces through 4”
  • Process gases: Nitrogen and forming gas (4% H2 balance N2)
  • Computer controlled


Useful System Links

Equipment Use Fees

Internal $30/hour External $60/hour

Staff time: Internal: $40/hour External: $80/hour

Schedule Training 


Operators Manual